Numerical analysis of electromigration in thin film VLSI interconnections

Author

Petrescu, V. ; Mouthaan, T. ; Schoenmaker, W. ; Angelescu, S. ; Vissarion, R. ; Dima, G. ; Wallinga, H. ; Profirescu, M.D.

Author_Institution

Dept. of Electron. & Telecommun., Politehnica Univ. of Bucharest, Romania

fYear

1995

fDate

11-14 Oct 1995

Firstpage

327

Lastpage

330

Abstract

Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a serious reliability hazard. A software tool based on finite element analysis has been developed to solve the two partial differential equations of the two particle vacancy/imperfection model. Simulation results of the complex grain structure of Al thin films show a very good match with experimental results

Keywords

VLSI; aluminium; electromigration; finite element analysis; impurity-vacancy interactions; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; semiconductor process modelling; Al; Al thin films; complex grain structure; electromigration; finite element analysis; numerical analysis; partial differential equations; reliability hazard; simulation results; software tool; thin film VLSI interconnections; two particle vacancy/imperfection model; Circuit simulation; Electromigration; Finite element methods; Hazards; Numerical analysis; Partial differential equations; Software tools; Thin film circuits; Transistors; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.494928

Filename

494928