DocumentCode
3450787
Title
The Gain and Related Characteristics of Self-Assembled Quantum Dash Structures
Author
Chan, K.S. ; Wei, J.H.
Author_Institution
Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Hong Kong SAR, China, e-mail: apkschan@cityu.edu.hk
fYear
2006
fDate
10-13 Jan. 2006
Firstpage
353
Lastpage
356
Abstract
The effects of size fluctuation on the gain and related characteristics of quantum dash structures are analysed theoretically. Detailed comparison with quantum well structures and performance optimization by blue-shifting the emission energy are carried out.
Keywords
Charge carrier processes; Fluctuations; Gaussian distribution; Indium phosphide; Laser stability; Physics; Quantum dots; Self-assembly; Substrates; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN
0-7803-9357-0
Type
conf
DOI
10.1109/NANOEL.2006.1609746
Filename
1609746
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