On the suitability of BiMOS high power devices in intelligent, snubberless power conditioning circuits

Author

Bauer, F. ; Stockmeier, T. ; Dettmer, H. ; Lendenmann, H. ; Fichtner, W.

Author_Institution

ABB Semicond. Ltd., Lenzburg, Switzerland

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

201

Lastpage

206

Abstract

After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D device and circuit simulation tools. The focus of this comparative study is put on the controllability of current and voltage transients mandatory for device protection in unsnubbered circuits. This goal is easily met with the IGBT coupling feedback into the gate; MCTs enter oscillatory modes under such conditions and may eventually be destroyed

Keywords

BIMOS integrated circuits; 2 kV; 20 A; BiMOS high power devices; MOS controlled thyristors; circuit simulation tools; coupling feedback; current transients; device protection; hard switching circuit environment; insulated gate bipolar transistors; mixed mode 2D device simulation; oscillatory modes; snubberless power conditioning circuits; voltage transients; Cathodes; Circuit simulation; Controllability; Feedback circuits; Insulated gate bipolar transistors; MOSFETs; Power conditioning; Protection; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583723

Filename

583723