Gate turn-off thyristor on the basis of the SDB-technique

Author

Grekhov, I.V. ; Kostina, L.S. ; Belakova, E.I. ; Rolnik, I.A.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

233

Lastpage

236

Abstract

Silicon Direct Bonding (SDB) technique has been used for designing GTO with a double-layer p-base in which a net of highly doped stripes was made at the interface between the two p-type layers. The device provides a-higher (by an order of magnitude or more) emitter blocking voltage and a lower (nearly 5 times) p-base tangential resistance than in the conventional GTO. This allows one to control a large operating area, to simplify the technology and improve the heat removal. The device has good static and dynamic characteristics with abrupt main current and control current breakage during the turn-off process in contrast to the conventional GTO

Keywords

thyristors; SDB-technique; control current breakage; double-layer p-base; dynamic characteristics; emitter blocking voltage; gate turn-off thyristor; highly doped stripes; operating area; p-base tangential resistance; p-type layers; silicon direct bonding; static characteristics; turn-off process; Bipolar transistors; Bonding; Boron; Breakdown voltage; Impurities; Silicon; Size control; Temperature control; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583729

Filename

583729