DocumentCode
3450908
Title
Growth of tungsten oxide nanowires using simple thermal heating
Author
Chen, G.Y. ; Stolojan, V. ; Cox, D.C. ; Giusca, C. ; Silva, S.R.P.
Author_Institution
Nano-Electronic Centre, Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
fYear
2006
fDate
10-13 Jan. 2006
Firstpage
376
Lastpage
378
Abstract
Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene and nitrogen mixture. By heating the tungsten in nitrogen ambient, single crystal tungsten oxide nanowires can be synthesized via a self-assembly mechanism. It was found that the yield can be significantly increased with the addition of acetylene, which also results in thinner nanowires, as compared to nanowires synthesized in an oxidizing ambient. The tungsten oxide nanowires are 5 to 15nm in diameter and hundreds of nanometers in length. In some cases, the use of acetylene and nitrogen process gas would result in tungsten oxide nanowires samples that appear visually transparent. Comparison of the growth using the acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account the effect of hydrocarbon addition is proposed.
Keywords
Annealing; Heating; Nanostructured materials; Nanotubes; Nanowires; Nitrogen; Scanning electron microscopy; Substrates; Tungsten; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN
0-7803-9357-0
Type
conf
DOI
10.1109/NANOEL.2006.1609752
Filename
1609752
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