Title :
GaAs quantum cascade lasers (/spl lambda/ /spl ap/ 11.5 /spl mu/m) operating on a Peltier element with laser action up to 15/spl deg/C
Author :
Page, H. ; Robertson, Andrew ; Sirtori, C. ; Becker, C. ; Glastre, Genevieve ; Nagle, J.
Abstract :
Summary form only given. GaAs based quantum cascade lasers working on a Peltier element are reported. These devices show 2.2 mW average power @240 K, demonstrating that this technology is no longer restricted to the cryogenic regime.
Keywords :
III-V semiconductors; gallium arsenide; laser transitions; quantum well lasers; thermal resistance; thermoelectric devices; waveguide lasers; 11.5 micron; 15 C; GaAs; Peltier element; average optical power; binary based waveguides; epi-side down mounting; intrinsic thermal characteristics; mid-infrared laser; planarised processing; quantum cascade lasers; thermal dissipation; thermal resistance; Capacitive sensors; Cryogenics; Gallium arsenide; Optical design; Optical recording; Power lasers; Quantum cascade lasers; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947867
