DocumentCode
3450973
Title
Silicon carbide p-n structures as power rectifiers
Author
Chelnokov, V.E. ; ´chuk, A. M Strel ; Ivanov, P.A. ; Lentz, G. ; Parniere, C.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
253
Lastpage
256
Abstract
We consider theoretical and practical aspects of designing power high-voltage rectifiers on the base of the wide bandgap semiconductor, 6H-silicon carbide
Keywords
silicon compounds; 6H-silicon carbide; SiC; design; p-n structures; power high-voltage rectifiers; wide bandgap semiconductor; Conductivity; Crystals; Doping; P-n junctions; Rectifiers; Semiconductor diodes; Silicon carbide; Substrates; Voltage; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583735
Filename
583735
Link To Document