Title :
Study of influence of pre-pulse power on xe capillary discharge EUV source
Author :
Qiang Xu ; Yongpeng Zhao ; Yao Xie ; Qi Li ; Qi Wang
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Tunable laser, Harbin Inst. of Technol., Harbin, China
Abstract :
At present, extreme ultraviolet lithograph (EUVL), which used 13.5nm (2% bandwidth) emission as the source, has been researched extensively to achieve 22nm node or even below. In this paper, we use the Al2O3 capillary discharge Z pinch technology to generate high density and high temperature Xe plasma and achieve Xe10+ 13.5nm emission. By comparing the discharge current and the spectra for main-pulse power discharge and pre-main-pulse power discharge respectively under the different discharge voltage and Xe flow rate, we analysis the influence of the pre-pulse power on the Xe plasma EUV emission and the discharge stability. The results show that the pre-pulse power can increase the discharge stability. Although the spectra are basically the same as that by main-pulse power only. The Xe gas cannot be broken down under the flow rate of 7.0sccm by main-pulse power only. And the gas pressure is too high to generate enough 13.5nm emission. On the other hand, for pre-main-pulse power, the Xe gas can be breakdown even the gas flow rate is decreased to 0.2sccm. The results show that the optimum flow rate of Xe to generate 13.5nm emission is 0.4sccm.
Keywords :
Z pinch; aluminium compounds; capillarity; discharges (electric); plasma density; plasma diagnostics; plasma flow; plasma instability; plasma sources; plasma temperature; plasma transport processes; ultraviolet lithography; xenon; Al2O3; EUVL; Xe; Xe capillary discharge EUV source; Xe flow rate; Xe plasma EUV emission; capillary discharge Z pinch; discharge current; discharge stability; discharge voltage; extreme ultraviolet lithograph; gas pressure; high density high temperature Xe plasma; optimum flow rate; pre-main-pulse power discharge; wavelength 13.5 nm; Discharges (electric); Fault location; Plasmas; Ultraviolet sources; X-ray lasers; Xenon; 13.5nm emission; Capillary discharge; EUV source; Pre-pulse discharge;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2013 International Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-1214-8
DOI :
10.1109/ICoOM.2013.6626509