Title :
A Circuit Simulation Model of a Novel Silicon Lateral Trench Power MOSFET for High Frequency Switching Applications
Author :
Varadarajan, K.R. ; Sinkar, A. ; Chow, T.P.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY
Abstract :
In this paper, we present a novel integrable 80 V silicon lateral trench power MOSFET together with its circuit simulation model. The lateral trench power MOSFET exhibits a low figure of merit (Ron times Qg) proving very attractive for high frequency switching applications. The lateral trench power MOSFET was initially simulated using the 2-D device simulator MEDICI, and an analytical model was developed and implemented in MAST HDL for use in circuit simulators such as SABER. Circuit simulations were performed using the model developed and high frequency switching performance of the proposed device is compared against a commercial device
Keywords :
circuit simulation; power MOSFET; semiconductor device models; silicon; 80 V; MAST HDL; Si; circuit simulation model; figure of merit; high frequency switching; silicon lateral trench power MOSFET; Analytical models; Capacitance; Circuit simulation; Frequency; MOSFET circuits; Medical simulation; Modeling; Power MOSFET; Silicon; Switching circuits;
Conference_Titel :
Computers in Power Electronics, 2006. COMPEL '06. IEEE Workshops on
Conference_Location :
Troy, NY
Print_ISBN :
0-7803-9724-X
Electronic_ISBN :
1093-5142
DOI :
10.1109/COMPEL.2006.305631
