Accurate simulation of combined electron and ion irradiated silicon devices for local lifetime tailoring

Both the ion and electron irradiation of power devices have already become a widely used practice to locally reduce the minority carrier lifetime. For efficient and accurate design of irradiation parameters, i.e. ion type, irradiation energy and dose, annealing temperature, etc., the device simulation taking into account the fully characterized deep levels and solving the complete solution of trap-dynamic equations is necessary