DocumentCode
3451069
Title
MISISFET: A Device with an Advanced Dielectric Structure
Author
Sarkar, Angik ; Bhattacharyya, T.K.
Author_Institution
Department of Electrical Engineering, Indian Institute of Technology, Kharagpur, WB-721302, India, Email: angik.sarkar@iitkgp.ac.in Fax: +91-3222-255303
fYear
2006
fDate
10-13 Jan. 2006
Firstpage
413
Lastpage
417
Abstract
A novel device (MISISFET) with a ‘dielectric stack’ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of resonant tunneling diodes(RTD). The device is capable of arresting stress induced breakdowns. The device can be realized by utilizing materials forming Silicon compatible RTDs.
Keywords
Dielectric devices; Dielectrics and electrical insulation; Energy states; Geometry; Leakage current; MOSFET circuits; Resonant tunneling devices; Semiconductor diodes; Silicon; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN
0-7803-9357-0
Type
conf
DOI
10.1109/NANOEL.2006.1609761
Filename
1609761
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