Title :
Experimentally verified, temperature dependent physical models/parameters for power device simulation
Author :
Isberg, M. ; Jonsson, P. ; Masszi, F. ; Vojdani, F. ; Bleichner, H. ; Rosling, M. ; Nordlander, E.
Author_Institution :
Scanner Lab., Uppsala Univ., Sweden
fDate :
31 May-3 Jun 1994
Abstract :
This paper discusses the importance of reliable physical models/parameters used in drift-diffusion device simulation of power devices. Simple devices, diodes, and considerably more complicated structures, Gate Turn-Off thyristors (GTO:s) have been investigated. Using both electrical and optical measurement techniques, comparisons have been made between measured data and simulated results. A proposal is made for new Auger recombination parameter values and for the temperature dependence of the Shockley-Read-Hall lifetime in the temperature range of 300-450 K
Keywords :
semiconductor device models; 300 to 450 K; Auger recombination parameter; Gate Turn-Off thyristors; Shockley-Read-Hall lifetime; diodes; drift-diffusion device simulation; electrical measurement; optical measurement; physical models; power devices; temperature dependence; Computational modeling; Computer simulation; Educational institutions; Electric variables measurement; Optical scattering; Radiative recombination; Semiconductor diodes; Silicon; Temperature dependence; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583742
