Influence of the mechanical conditions on the electrical and structural properties of the interface between directly bonded silicon wafers

Author

Laporte, A. ; Sarrabayrouse, G. ; Lescouzères, L. ; PeyreLavigne, A. ; Benamara, M. ; Rocher, A. ; Claverie, A.

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

293

Lastpage

296

Abstract

We have studied the influence of the flatness and the relative misorientation of two contacting wafers on the Spreading Resistance profiles obtained in the interfacial region after direct bonding. Both parameters are shown to have a significant influence on the electrical properties of the structure. Plan-view Transmission Electron Microscopy examination of the interfaces suggests that this influence may take its origin from dislocation-related electrically active defects

Keywords

silicon; Si; contacting wafers; directly bonded silicon wafers; dislocation-related electrically active defects; electrical properties; flatness; interface; mechanical conditions; misorientation; plan-view transmission electron microscopy; spreading resistance profiles; structural properties; Contacts; Electric resistance; Electrical resistance measurement; Interface states; Mechanical factors; Silicon; Strontium; Tensile stress; Transmission electron microscopy; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583746

Filename

583746