DocumentCode
3451234
Title
Two-dimensional dopant profile characterization for MCT and IGBT structures
Author
Dallmann, G. ; Feudel, T. ; Syhre, H. ; Lendenmann, H. ; Fichtner, W.
Author_Institution
Inst. Fresenius, Dresden, Germany
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
305
Lastpage
308
Abstract
Different measurement and imaging techniques (SIMS, spreading resistance, electron beam induced current, dopant etching and SEM inspection) have been used together with 2D process simulation to acquire complete information about vertical and lateral dopant distribution in MCT and IGBT structures. We utilized impurity depth profiles to verify the simulation tools. The information of the process simulation than was very helpful to interpret the results of the 2D imaging techniques
Keywords
MOS-controlled thyristors; 2D imaging; 2D process simulation; IGBT; MCT; SEM; SIMS; dopant etching; electron beam induced current; impurity depth profiles; spreading resistance; two-dimensional dopant profile; Boron; Doping; Focusing; Glass; Inspection; Insulated gate bipolar transistors; Laboratories; MOSFETs; Strontium; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583749
Filename
583749
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