Computer modeling of static and dynamic behavior of multiple quantum well infrared photodetectors

Author

Ershov, M. ; Ryzhii, V. ; Saito, K. ; Hamaguchi, C.

Author_Institution

Dept. of Comput. Hardware, Aizu Univ., Aizu-Wakamatsu, Japan

fYear

1995

fDate

7-9 Nov 1995

Firstpage

47

Lastpage

56

Abstract

In this paper we present the results of the theoretical study of static and dynamic properties of multiple Quantum Well Infrared Photodetectors (QWIPs). This study is based on the original model of the QWIPs describing the electron injection from the emitter, transport in the QW structure, and capture (emission) in the QWs in a self-consistent manner. Both static and transient characteristics of the QWIPs are dominated by the contact effects associated with the recharging of the QWs under the applied voltage or infrared radiation

Keywords

electronic engineering computing; infrared detectors; photodetectors; physics computing; semiconductor device models; semiconductor quantum wells; transient response; MQW infrared photodetectors; capture; computer modeling; contact effects; dynamic behavior; electron injection; emitter barrier structure; intersubband QWIP; recharging; static behavior; transient characteristics; Electron emission; Gallium arsenide; Optical computing; Photoconductivity; Photodetectors; Poisson equations; Quantum computing; Thermionic emission; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, 1995. Proceedings., International Workshop on

Conference_Location

Aizu-Wakamatsu

Print_ISBN

0-8186-7321-4

Type

conf

DOI

10.1109/PCMDLS.1995.494959

Filename

494959