Highly selective carrier injection in V-groove quantum wire light-emitting diodes

Author

Weman, H. ; Martinet, E. ; Rudra, A. ; Kapon, K.

Author_Institution

Dept. of Phys., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

4

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

1099

Abstract

We report on the observation of highly efficient carrier injection into GaAs/AlGaAs V-groove QWR light-emitting diodes (LEDs) containing self-ordered vertical quantum wells (VQWs), resulting in narrow linewidth (10 meV) electroluminescence (EL) from one-dimensional (1D) excitons at room temperature. The GaAs/AlGaAs QWRs were grown by low pressure organometallic chemical vapor deposition on GaAs substrates patterned with 0.5 /spl mu/m pitch V-grooves.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; electroluminescence; excitons; gallium arsenide; light emitting diodes; semiconductor quantum wires; spectral line breadth; 0.5 mum; GaAs; GaAs substrates; GaAs-AlGaAs; GaAs/AlGaAs QWR; LED; V-groove quantum wire light-emitting diodes; highly efficient carrier injection; highly selective carrier injection; low pressure organometallic chemical vapor deposition; narrow linewidth electroluminescence; one-dimensional excitons; room temperature; self-ordered vertical quantum wells; Charge carrier processes; Excitons; Gallium arsenide; Light emitting diodes; P-i-n diodes; Physics; Quantum dots; Temperature; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.814682

Filename

814682