Implantation-induced intermixing in GaAs/AlGaAs quantum well structures and its application to quantum well lasers

Author

Tan, H.H. ; Jagadish, C. ; Johnston, M.B. ; Gal, M.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

4

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

1101

Abstract

We demonstrate the use of ion implantation to induce intermixing of GaAs/AlGaAs quantum wells. The influence of various parameters such as implantation dose and temperature, annealing conditions and Al mole fraction are presented. Finally, the application of this technique to tune the lasing wavelength of GRINSCH laser diodes is demonstrated.

Keywords

III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; gallium arsenide; ion implantation; laser tuning; quantum well lasers; semiconductor quantum wells; Al mole fraction; GRINSCH laser diodes; GaAs-AlGaAs; GaAs/AlGaAs quantum well structures; annealing conditions; implantation dose; implantation-induced intermixing; ion implantation; lasing wavelength tuning; quantum well lasers; temperature; Annealing; Diode lasers; Gallium arsenide; Ion implantation; Laser theory; Laser tuning; MOCVD; Quantum well lasers; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.814683

Filename

814683