Filamentation and linewidth enhancement factor In InGaAs quantum dot lasers

Author

Smowton, P.M. ; Pearce, E.J. ; Ning, Y. ; Herrmann, E. ; Hopkinson, M.

Author_Institution

Dept. of Phys. & Astron., Cardiff Univ., UK

fYear

2001

fDate

11-11 May 2001

Firstpage

355

Lastpage

356

Abstract

Summary form only given. Quantum dot lasers may offer advantages for high power output. Results have shown that they can exhibit very low linewidth enhancement factors, which should result in filament free operation. In this work we have experimentally examined the degree of filamentation exhibited in broad area lasers for a variety of InGaAs quantum dot structures emitting in the 1 /spl mu/m band and compared the results with those for quantum well devices operating at the same wavelength. We also determined the linewidth enhancement factor for these structures using a combination of measurements of the cavity Fabry-Perot modes and the multi-section gain technique.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser stability; quantum well lasers; semiconductor quantum dots; spectral line breadth; 1 micron; InGaAs; cavity Fabry-Perot modes; filamentation degree; high power output; linewidth enhancement; lower enhancement factor; multi-section gain technique; multiple layers; quantum dot lasers; single layers; Absorption; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical losses; Physics; Quantum dot lasers; Quantum dots; Quantum well lasers; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947906

Filename

947906