High temperature performance of dielectrically isolated LDMOSFET: characterization, simulation and analysis

Author

Sunkavalli, Ravishankar ; Baliga, Jayant B. ; Huang, Y.S.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

359

Lastpage

364

Abstract

The temperature dependence of the static parameters of the 550 V RESURF DI LDMOSFET is reported. High temperature measurements were carried out from 25°C-200°C at intervals of 25°C. The parameters measured include the on-resistance, threshold voltage, transconductance, effect of substrate bias, breakdown voltage and leakage current. Accurate analytic models, supported by extensive two-dimensional numerical simulations, have been developed to explain and predict device performance

Keywords

power MOSFET; 25 to 200 C; 550 V; RESURF DI LDMOSFET; analytic models; breakdown voltage; dielectrically isolated LDMOSFET; high temperature performance; leakage current; on-resistance; static parameters; substrate bias; threshold voltage; transconductance; two-dimensional numerical simulations; Current measurement; Dielectric measurements; Dielectric substrates; Leakage current; Performance analysis; Predictive models; Temperature dependence; Temperature measurement; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583782

Filename

583782