Title :
Demonstration of passive Q-switching and passive mode-locking in 1.3 /spl mu/m, two-section InAs quantum dot lasers
Author :
Xiaodong Huang ; Stintz, A. ; Hua Li ; Lester, L.F. ; Cheng, J. ; Malloy, K.J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. The properties of quantum dot (QD) layers as absorbers in an active device have not been investigated in detail. In this paper, we describe the bistable operation of a long-wavelength, oxide-confined, two-section quantum dot laser with an integrated QD saturable absorber. Our structure exhibits passive Q-switching and passive mode-locking.
Keywords :
III-V semiconductors; Q-switching; indium compounds; laser mode locking; optical bistability; phase modulation; quantum well lasers; semiconductor quantum dots; DC characteristics; InAs; bistable operation; collinear autocorrelation; counterclockwise hysteresis loops; integrated saturable absorber; long-wavelength oxide-confined; passive Q-switching; passive mode-locking; phase modulation; two-section quantum dot laser; Autocorrelation; Laser mode locking; Laser theory; Optical pulses; Pulse measurements; Pulse modulation; Quantum dot lasers; Space vector pulse width modulation; Temperature; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947911
