Demonstration of passive Q-switching and passive mode-locking in 1.3 /spl mu/m, two-section InAs quantum dot lasers

Author

Xiaodong Huang ; Stintz, A. ; Hua Li ; Lester, L.F. ; Cheng, J. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

359

Abstract

Summary form only given. The properties of quantum dot (QD) layers as absorbers in an active device have not been investigated in detail. In this paper, we describe the bistable operation of a long-wavelength, oxide-confined, two-section quantum dot laser with an integrated QD saturable absorber. Our structure exhibits passive Q-switching and passive mode-locking.

Keywords

III-V semiconductors; Q-switching; indium compounds; laser mode locking; optical bistability; phase modulation; quantum well lasers; semiconductor quantum dots; DC characteristics; InAs; bistable operation; collinear autocorrelation; counterclockwise hysteresis loops; integrated saturable absorber; long-wavelength oxide-confined; passive Q-switching; passive mode-locking; phase modulation; two-section quantum dot laser; Autocorrelation; Laser mode locking; Laser theory; Optical pulses; Pulse measurements; Pulse modulation; Quantum dot lasers; Space vector pulse width modulation; Temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947911

Filename

947911