System Modeling and Characterization of SiC Schottky Power Diodes

Most of the present models of silicon carbide (SiC) Schottky diodes are not suitable for evaluating their performance from a system level. The models presented in this paper are specialized for system-level simulations. They are based on basic semiconductor theories and synthesis of some models in the literature. Theoretical and experimental characterization of SiC Schottky power diodes is also involved. The models describe both static and dynamic behaviors of SiC Schottky power diodes. Thermal effects are considered as well for a better evaluation of power losses evaluation and cooling system design. The models were also used to estimate the efficiencies of Si IGBT/SiC Schottky diode hybrid inverter. To validate the simulation, a Si IGBT/SiC Schottky diode hybrid inverter and a Si IGBT inverter were built and tested