Automated Parameter Extraction Software for High-Voltage, High-Frequency SiC Power MOSFETs

Author

Duong, Tam H. ; Hefner, Allen R. ; Berning, David W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA

fYear

2006

fDate

16-19 July 2006

Firstpage

205

Lastpage

211

Abstract

Previously developed IGBT model parameter extraction tools (IMPACT) are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary to establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. In this paper, the SiC-IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC power MOSFETs and for commercial silicon power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV

Keywords

power MOSFET; power engineering computing; semiconductor device models; silicon compounds; 1 kV; 10 kV; 2 kV; 400 V; 55 V; IGBT model; IMPACT; SiC; automated parameter extraction software; device structures; power MOSFET; power device library; voltage blocking; Capacitance; Data mining; Insulated gate bipolar transistors; MOSFETs; Parameter extraction; Power system modeling; Silicon carbide; Software tools; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers in Power Electronics, 2006. COMPEL '06. IEEE Workshops on

Conference_Location

Troy, NY

ISSN

1093-5142

Print_ISBN

0-7803-9724-X

Electronic_ISBN

1093-5142

Type

conf

DOI

10.1109/COMPEL.2006.305676

Filename

4097488