SPICE Model of SiC JFETs for Circuit Simulations

Author

Wang, Yi ; Cass, Callaway J. ; Chow, T. Paul ; Wang, Fred ; Boroyevich, Dushan

Author_Institution

Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY

fYear

2006

fDate

16-19 July 2006

Firstpage

212

Lastpage

215

Abstract

This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results

Keywords

SPICE; junction gate field effect transistors; power semiconductor switches; semiconductor device models; silicon compounds; 1200 V; 5 A; 600 V; JFET; SPICE model; SiC; circuit simulations; dynamic characterizations; high voltage transistors; parameter extraction; static characterizations; switching behavior; temperature dependent characterization; Circuit simulation; JFETs; MOSFET circuits; Power electronics; Power system modeling; SPICE; Silicon carbide; Switches; Temperature dependence; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers in Power Electronics, 2006. COMPEL '06. IEEE Workshops on

Conference_Location

Troy, NY

ISSN

1093-5142

Print_ISBN

0-7803-9724-X

Electronic_ISBN

1093-5142

Type

conf

DOI

10.1109/COMPEL.2006.305677

Filename

4097489