Title :
A high aspect ratio MEMS process with surface micromachined polysilicon for high accuracy inertial sensing
Author :
Geisberger, A. ; Schroeder, Stefan ; Dixon, J. ; Suzuki, Yuya ; Makwana, J. ; Qureshi, Shaima
Author_Institution :
Sensor & Actuator Solution Div., Freescale Semicond., Inc., Tempe, AZ, USA
Abstract :
A unique process is described that has the advantages of high aspect ratio, deep reactive ion etched, single crystal silicon with the diversity of polysilicon surface micromachining to enable advances in capacitive inertial sensing. This process has been designed to incorporate a fully released via between the two structural layers which considerably increases the design capabilities, providing a means for improved package stress isolation and area efficiency. A high accuracy low-g XY accelerometer for the automotive electronic stability control market is presented using this technology.
Keywords :
accelerometers; automotive electronics; capacitive sensors; elemental semiconductors; isolation technology; micromachining; microsensors; silicon; sputter etching; Si; area efficiency; automotive electronic stability control market; capacitive inertial sensing; deep reactive ion etching; high accuracy inertial sensing; high accuracy low-g XY accelerometer; high aspect ratio MEMS process; package stress isolation; single crystal silicon; surface micromachined polysilicon; Accelerometers; Accuracy; Fingers; Micromechanical devices; Sensors; Substrates; Transducers; High accuracy accelerometer; low-g in-plane inertial sensor; package stress isolated;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
DOI :
10.1109/Transducers.2013.6626690
