Thin SOI IGBT leakage current and a new device structure for high temperature operation

Author

Matsudai, Tomoko ; Yamaguchi, Yoshihiro ; Yasuhara, Norio ; Nakagawa, Akio ; Mochizuki, Hiroshi

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

399

Lastpage

403

Abstract

This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200°C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation

Keywords

silicon-on-insulator; 200 C; LIGBTs; SOI IGBT; Si; device structure; forward voltage-drop; high temperature operation; lateral IGBT; leakage current; onstate resistance; power IC application; switching speed; temperature dependence; thin SOI device; Automotive engineering; CMOS technology; Diodes; Insulated gate bipolar transistors; Integrated circuit technology; Leakage current; MOSFETs; Motor drives; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583804

Filename

583804