DocumentCode
3452326
Title
Substrate orientation dependence of first- and second-oxide-layer growth kinetics: comparison between Si[001]2 x 1 and Si[111]7 x 7 surfaces
fYear
2004
fDate
Oct. 27-29, 2004
Firstpage
44
Lastpage
45
Keywords
Diffraction; Electron beams; Inorganic materials; Kinetic theory; MOSFET circuits; Optical reflection; Oxidation; Spectroscopy; Surface morphology; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN
4-99024720-5
Type
conf
DOI
10.1109/IMNC.2004.245713
Filename
1459463
Link To Document