DocumentCode
3452465
Title
Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits
Author
Rodwell, Mark ; Griffith, Z. ; Parthasarathy, N. ; Lind, E. ; Sheldon, C. ; Bank, S.R. ; Singisetti, U. ; Urteaga, M. ; Shinohara, K. ; Pierson, R. ; Rowell, P.
Author_Institution
ECE Department, University of California, Santa Barbara, 93106, USA. phone: 805-893-3244, fax 805-893-3262, rodwell@ece.ucsb.edu
fYear
2006
fDate
26-28 June 2006
Firstpage
5
Lastpage
8
Abstract
Here we consider the prospects for continued improvement in InP HBTs, specifically the challenges faced in a further doubling of transistor and IC bandwidth. Our objective is an IC technology supporting 300 GHz digital clock rates, -600 GHz reactively-tuned amplifiers, and balanced cutoff frequencies in the 700-1000 GHz range. Such ICs would permit monolithic transceivers for 300 GHz and 600 GHz imaging systems, -250 GHz high-rate communications radios, chip sets for 300 Gb/s optical data transmission, and very high-resolution microwave mixed-signal ICs.
Keywords
Bandwidth; Bipolar transistors; Clocks; Conductivity; Digital circuits; Digital integrated circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305093
Filename
4097510
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