InAsP/InAlGaAs lasers for high T/sub 0/ operation

Author

Anan, T. ; Yamada, M. ; Tokutome, K. ; Sugou, S.

Author_Institution

Optoelectron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan

Volume

4

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

1217

Abstract

Low-cost long-wavelength lasers operating at high temperatures without cooling systems are required for optical subscriber systems. A quantum-well active layer with a large conduction discontinuity is thought to be effective for improving high-temperature characteristics of long-wavelength lasers. In this paper, we report on gas-source MBE growth conditions, and the fabrication process and lasing properties of these newly developed InAsP/InAlGaAs laser diodes with high-temperature characteristics.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor lasers; InAsP-InAlGaAs; InAsP/InAlGaAs lasers; gas-source MBE growth conditions; high T/sub 0/ operation; high-temperature characteristics; large conduction discontinuity; laser diodes; long-wavelength lasers; low-cost long-wavelength lasers; optical subscriber systems; quantum-well active layer; semiconductor; Degradation; Electrons; Indium phosphide; Optical materials; Optical waveguides; Quantum well devices; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.814743

Filename

814743