DocumentCode
3452570
Title
The crucial role of doping for high repetition rate monolithic modelocking of multiple quantum well GaAs/AIGaAs lasers
Author
McDougall, S.D. ; Vogele, B. ; Stanley, C.R. ; Ironside, C.N.
Author_Institution
Department of Electronics and Electrical Engineering, University of Glasgow
Volume
11
fYear
1997
fDate
18-23 May 1997
Firstpage
224
Lastpage
224
Keywords
Absorption; Doping; Epitaxial growth; Epitaxial layers; Excitons; Laser modes; Quantum well lasers; Semiconductor device modeling; Semiconductor lasers; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
0-7803-4125-2
Type
conf
DOI
10.1109/CLEO.1997.603045
Filename
603045
Link To Document