Design and fabrication of high power and broad-band GaInAsP/InP strained quantum well superluminescent diodes with tapered active region

Author

Yamatoya, T. ; Mori, S. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

4

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

1227

Abstract

High power and broadband superluminescent diodes (SLDs) would be useful for various optical sensing applications and for spectrum-sliced multi-wavelength light sources. We proposed and developed SLDs with a tapered active region. We present the design and fabrication of GaInAsP-InP strained QW SLDs with an optimized taper structure. Also, broad-band emission has been obtained by using chirped QW structures.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical design techniques; optical fabrication; superluminescent diodes; GaInAsP-InP; GaInAsP-InP strained QW SLDs; broad-band emissio; chirped QW structures; high power broad-band GaInAsP-InP strained quantum well superluminescent diodes; optical design; optical fabrication; optical sensing applications; optimized taper structure; spectrum-sliced multi-wavelength light source; tapered active region; Chirp; Fabrication; Indium phosphide; Laboratories; Large-scale systems; Light sources; Optical sensors; Power generation; Pulse measurements; Superluminescent diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.814748

Filename

814748