Title :
High Performance 1.45 μm InAs Quantum Dot Lasers on GaAs
Author :
Mi, Z. ; Yang, J. ; Bhattacharya, P.
Author_Institution :
Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA
Keywords :
Annealing; Bandwidth; Chirp; Gallium arsenide; Indium phosphide; Laser theory; Quantum dot lasers; Quantum well lasers; Solid lasers; Temperature;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305101
