• DocumentCode
    3452651
  • Title

    Elemental devices for monolithic optoelectronic integrated circuits on lattice-matched Si/III-V-N/Si structure

  • Author

    Furukawa, Y. ; Yonezu, H. ; Wakahara, A. ; Morisaki, Y. ; Moon, S.Y. ; Ishiji, S. ; Ohtani, M.

  • Author_Institution
    Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, Aichi 441-8580, JAPAN. Phone: +81-532-44-6746, Fax: +81-532-44-6757, Email: furukawa@eee.tut.ac.jp
  • fYear
    2006
  • fDate
    26-28 June 2006
  • Firstpage
    27
  • Lastpage
    28
  • Keywords
    DH-HEMTs; Integrated circuit technology; Light emitting diodes; Luminescence; MOSFETs; Molecular beam epitaxial growth; Monolithic integrated circuits; Moon; Optoelectronic devices; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2006 64th
  • Conference_Location
    State College, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-9748-7
  • Type

    conf

  • DOI
    10.1109/DRC.2006.305103
  • Filename
    4097520