Low-voltage vibration sensor in standard CMOS process

Author

Peng, Benxian ; Yu, Ting ; Yu, Fengqi

Author_Institution

Dept. of Integrated Electron., Shenzhen Inst. of Adv. Technol., Shenzhen

fYear

2007

fDate

15-18 Dec. 2007

Firstpage

1512

Lastpage

1516

Abstract

A novel micro-vibration sensor with MOS structure is proposed and two solutions to reduce high threshold voltage are developed. The proposed sensor exhibits prefect linearity up to 99.98% and high resolution of 0.19 muA/g. The vibration sensor can provide various potential applications, such as civil structural health monitoring, biomedical applications, low power consumption wireless sensor networks. The Sensor is designed with commercial standard 0.25 mum CMOS process followed by only one maskless post-CMOS step. Gas rarefaction effect in ultra-thin air gap is also discussed in this paper.

Keywords

CMOS integrated circuits; microsensors; vibration measurement; gas rarefaction effect; low-voltage vibration sensor; micro-vibration sensor; size 0.25 mum; standard CMOS process; ultra-thin air gap; Biosensors; CMOS process; CMOS technology; Capacitance; Damping; Electromechanical sensors; Etching; Micromechanical devices; Threshold voltage; Vibrations; CMOS technology; air damping; vibration sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Robotics and Biomimetics, 2007. ROBIO 2007. IEEE International Conference on

Conference_Location

Sanya

Print_ISBN

978-1-4244-1761-2

Electronic_ISBN

978-1-4244-1758-2

Type

conf

DOI

10.1109/ROBIO.2007.4522388

Filename

4522388