Title :
An improved de-embedding technique for on-wafer high-frequency characterization
Author :
Koolen, M.C.A.M. ; Geelen, J.A.M. ; Versleijen, M.P.J.G.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
An improved correction procedure for on-wafer S-parameter measurements has been developed and implemented. The method takes the effects of series parasitics into account in a simple, straightforward way. The improved performance of the method with respect to the usual method-which accounts for parallel parasitics only-especially at frequencies exceeding a few GHz is demonstrated. Its performance is compared with that of more complex methods. fT determined from Y-parameters is not affected by this correction method, but the individual Y-parameters are. Therefore, for transistor characterization using measured Y-parameters the proposed correction should be adopted
Keywords :
S-parameters; bipolar transistors; microwave measurement; solid-state microwave devices; HF characterisation; Y-parameters; correction method; correction procedure; de-embedding technique; on-wafer S-parameter measurements; on-wafer high-frequency characterization; series parasitics; transistor characterization; Calibration; Equivalent circuits; Frequency measurement; Impedance measurement; Integrated circuit interconnections; Laboratories; Microwave measurements; Microwave transistors; Performance evaluation; Scattering parameters;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160985
