DocumentCode
3452736
Title
Super-Self-Aligned Back-Gate/Double-Gate Planar Transistors with Thick Source/Drain and Thin Silicon Channel
Author
Hao Lin ; Liu, Hongying ; Kumar, Ajit ; Avci, Uygar E. ; VanDelden, J. ; Kumar, Ajit ; Tiwari, Sunita
Author_Institution
School of Applied & Engineering Physics, School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USA; Email: lh77@cornell.edu, Phone: 607.255.5323 Fax: 607.254.3508
fYear
2006
fDate
26-28 June 2006
Firstpage
37
Lastpage
38
Keywords
Double-gate FETs; Fabrication; Geometry; MOSFETs; Oxidation; Planarization; Silicon; Thickness control; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305108
Filename
4097525
Link To Document