Title :
Electrical characterization of porous silicon
Author :
Angelescu, Anca ; Kleps, Irina
Author_Institution :
Res. Inst. for Electron. Components, Bucharest, Romania
Abstract :
Porous silicon was investigated by capacitance and current-voltage measurements on MIS devices. Four different substrates: 6-8 ohmcm (p-type), 5×10-3-2×10-2 ohmcm (p+ -type), 6-10 ohmcm (n-type) and 10-2-3×10-2 ohmcm (n+-type) are used as starting material. The samples were also plasma oxidized in a RIE equipment at the power P=1500 W in a pure oxygen discharge. Porous silicon (PS) formed from p and p +-type substrates exhibits full and partial carrier depletion respectively. The plasma oxidized porous silicon (OPS) for PS substrates with porosity P<60% presents a stable surface with an uniform SiO2 layer, while for PS substrates with P>60% this effect is made indistinct by a large number of cracks occurring on the surface after plasma oxidation due to the morphological structure
Keywords :
MIS devices; elemental semiconductors; oxidation; porous materials; silicon; MIS devices; RIE; Si-SiO2; capacitance-voltage measurements; carrier depletion; current-voltage measurements; electrical characteristics; morphological structure; oxidized porous silicon; plasma oxidation; porous silicon; substrates; surface cracks; Capacitance measurement; Current measurement; MIS devices; Oxidation; Plasma materials processing; Plasma stability; Silicon; Surface cracks; Surface discharges; Surface morphology;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495031
