Electrical characterization of porous silicon

Author

Angelescu, Anca ; Kleps, Irina

Author_Institution

Res. Inst. for Electron. Components, Bucharest, Romania

fYear

1995

fDate

11-14 Oct 1995

Firstpage

335

Lastpage

338

Abstract

Porous silicon was investigated by capacitance and current-voltage measurements on MIS devices. Four different substrates: 6-8 ohmcm (p-type), 5×10^-3-2×10^-2 ohmcm (p⁺-type), 6-10 ohmcm (n-type) and 10^-2-3×10^-2 ohmcm (n⁺-type) are used as starting material. The samples were also plasma oxidized in a RIE equipment at the power P=1500 W in a pure oxygen discharge. Porous silicon (PS) formed from p and p ⁺-type substrates exhibits full and partial carrier depletion respectively. The plasma oxidized porous silicon (OPS) for PS substrates with porosity P<60% presents a stable surface with an uniform SiO₂ layer, while for PS substrates with P>60% this effect is made indistinct by a large number of cracks occurring on the surface after plasma oxidation due to the morphological structure

Keywords

MIS devices; elemental semiconductors; oxidation; porous materials; silicon; MIS devices; RIE; Si-SiO₂; capacitance-voltage measurements; carrier depletion; current-voltage measurements; electrical characteristics; morphological structure; oxidized porous silicon; plasma oxidation; porous silicon; substrates; surface cracks; Capacitance measurement; Current measurement; MIS devices; Oxidation; Plasma materials processing; Plasma stability; Silicon; Surface cracks; Surface discharges; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.495031

Filename

495031