DocumentCode
3452772
Title
Oxygen precipitation control during bipolar IC processes
Author
Veron, A. ; Ohanesian, M.
Author_Institution
Baneasa SA, Bucharest, Romania
fYear
1995
fDate
11-14 Oct 1995
Firstpage
339
Lastpage
342
Abstract
The paper presents an adequate procedure for controlling the oxygen precipitation kinetics during the bipolar IC processing sequence. The nucleation of oxide precipitates at an early stage of processing is optimally designed based on numerical simulations of oxide precipitate evolution during the processing sequence. A precipitation test for proper screening of silicon crystals received from different suppliers is also proposed
Keywords
bipolar integrated circuits; getters; integrated circuit technology; precipitation; process control; semiconductor process modelling; O precipitation control; O precipitation kinetics; Si crystal screening; Si:O; bipolar IC processes; internal gettering; numerical simulations; optimal design; oxide precipitate nucleation; precipitation test; Annealing; Bipolar integrated circuits; Epitaxial growth; Gettering; History; Numerical simulation; Oxygen; Silicon; Temperature dependence; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495032
Filename
495032
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