DocumentCode
3452782
Title
A novel technique for p-well NMOS power IC´s
Author
Cao Guangjun ; Sanqing, Liu ; Jianhua, Ying ; Xu Yanzhong ; Zuxin, Qin
Author_Institution
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
1995
fDate
11-14 Oct 1995
Firstpage
343
Lastpage
346
Abstract
A novel BJLD technique is proposed for p-well NMOS PIC fabrication. Theoretical analysis on the typical structure shows that VDMOS cells and p-well NMOS ICs can be compatibly integrated in one chip. Experimental results proved that the BJDL p-n junctions have the same breakdown properties as the commonly-diffused ones
Keywords
MOS integrated circuits; diffusion; integrated circuit technology; power integrated circuits; BJLD technique; VDMOS cells; breakdown properties; butt joint lateral diffusion; p-n junctions; p-well NMOS power IC; Boron; Breakdown voltage; Costs; Doping; Fabrication; Integrated circuit layout; Isolation technology; MOS devices; MOSFET circuits; Metallization;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495033
Filename
495033
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