Title :
Evolution of the power devices based on the concept of functional integration of MOS and bipolar devices
Author :
Sanchez, J.L. ; Rerriane, R. ; Austin, P.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Abstract :
In this paper, the integration possibilities and strategies resulting from the association of MOS and bipolar devices are presented with a view to developing new families of integrated power devices based on the concept of functional integration. An example of high voltage integrated switch illustrates these integration strategies
Keywords :
BIMOS integrated circuits; integrated circuit reliability; power integrated circuits; power semiconductor switches; MOS/bipolar devices; functional integration; high voltage integrated switch; integrated power devices; Circuits; Electricity supply industry; Galvanizing; Insulation; Power electronics; Power semiconductor switches; Protection; Signal processing; Thyristors; Voltage;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495035
