DocumentCode
3452801
Title
Evolution of the power devices based on the concept of functional integration of MOS and bipolar devices
Author
Sanchez, J.L. ; Rerriane, R. ; Austin, P.
Author_Institution
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
fYear
1995
fDate
11-14 Oct 1995
Firstpage
353
Lastpage
358
Abstract
In this paper, the integration possibilities and strategies resulting from the association of MOS and bipolar devices are presented with a view to developing new families of integrated power devices based on the concept of functional integration. An example of high voltage integrated switch illustrates these integration strategies
Keywords
BIMOS integrated circuits; integrated circuit reliability; power integrated circuits; power semiconductor switches; MOS/bipolar devices; functional integration; high voltage integrated switch; integrated power devices; Circuits; Electricity supply industry; Galvanizing; Insulation; Power electronics; Power semiconductor switches; Protection; Signal processing; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495035
Filename
495035
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