DocumentCode
3452810
Title
Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation
Author
Ok, Injo ; Kim, H. ; Zhang, M. ; Lee, T. ; Zhu, F. ; Thareja, G. ; Yu, L. ; Koveshnikov, S. ; Tsai, W. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S. ; Lee, Jack C.
Author_Institution
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78758. Phone: (512)471-1627, Fax: (512)471- 5625, email: okinjo@mail.utexas.edu
fYear
2006
fDate
26-28 June 2006
Firstpage
45
Lastpage
46
Keywords
Atherosclerosis; Electric variables; Frequency; Gallium arsenide; Hafnium oxide; MOSFET circuits; Passivation; Personal digital assistants; Silicon; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305112
Filename
4097529
Link To Document