Effect of interfacial PdNi concentration on time response of Si-based electrodeposited hydrogen sensors

This paper presents Hydrogen sensors based upon electrodeposited PdNi-Si Schottky barriers which have been fabricated with a gradient structure in the PdNi concentration in a single electrodeposition run through variation of the deposition potential. The resulting sensors in the back to back diode configuration show very low idle leakage current and good sensitivity to hydrogen. The structure with increased Ni concentration at the PdNi-Si interface shows dramatically improved time response as compared to the uniform concentration sample. I-V and C-V characteristics of these hydrogen sensors also depicts in this paper to determine the Schottky barrier height and ideality factor.