Title :
Electronic processes in bismuth type doped semimetals
Author :
Bodiul, P.P. ; Garabazhiu, V.F. ; Gitsu, D.V.
Author_Institution :
Inst. of Appl. Phys., Kishinau, Moldova
Abstract :
Properties of highly doped bismuth alloys with impurities of the VI group are investigated. Anomalous behaviour of statistical and kinetical characteristics dependence upon the impurity concentration is interpreted within the framework of a notion of impurity states in semimetal systems
Keywords :
bismuth alloys; impurities; impurity states; semimetals; bismuth alloys; doped semimetals; electronic processes; group VI impurities; impurity concentration; impurity states; kinetical characteristics; statistical characteristics; Anisotropic magnetoresistance; Bismuth; Cobalt alloys; Doping; Green function; Impurities; Temperature dependence;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495047
