DocumentCode
3453057
Title
Strained SiGe/Ge Buried Channel pMOSFETs Design For High Performance Applications
Author
Wang, Xinlin ; Rim, Ken ; Shang, Huiling ; Koester, Steve ; Oldiges, Phil ; Ieong, Meikei
Author_Institution
IBM Semiconductor Research and Development Center, Systems and Technology Group, Hopewell Junction, NY 12533. Email: xinlinwlus.ibm.com, Phone: (845)894-4740, Fax: (845)892-6483
fYear
2006
fDate
26-28 June 2006
Firstpage
75
Lastpage
76
Keywords
Carrier confinement; Degradation; Doping profiles; Germanium silicon alloys; MOSFETs; Niobium compounds; Scalability; Semiconductor device modeling; Silicon germanium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305125
Filename
4097542
Link To Document