• DocumentCode
    3453070
  • Title

    MOS characteristics and a modified linear MOS resistor

  • Author

    Balasubramanian, Karthi ; Vineeth, K.V. ; Neeraj, A. ; Nikhil, K.M.

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Amrita Sch. of Eng., Ettimadai, India
  • fYear
    2009
  • fDate
    14-15 Dec. 2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents an overview of MOS device characteristics and its use as voltage controlled resistors. A modified gate driving mechanism is proposed to enhance the MOS resistor properties. Generally, MOS resistors behave linearly only for a small value of Drain-to-Source voltage (VDS). With the new scheme, the non-linearity that arises out of its dependence on VDS is removed and the linearity property of the resistor is kept intact even for larger values of VDS.
  • Keywords
    MIS devices; resistors; MOS characteristics; MOS device characteristics; MOS resistor property; drain-to-source voltage; linear MOS resistor; linearity property; modified gate driving mechanism; voltage controlled resistors; Communication system control; FETs; MOS devices; MOSFET circuits; Mechanical factors; Resistors; Silicon; Substrates; Transconductance; Voltage control; Drain Curves; Linear MOS resistor; MOS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Technical Postgraduates (TECHPOS), 2009 International Conference for
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-5223-1
  • Electronic_ISBN
    978-1-4244-5224-8
  • Type

    conf

  • DOI
    10.1109/TECHPOS.2009.5412109
  • Filename
    5412109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3453070