DocumentCode :
3453090
Title :
Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement
Author :
Ong, Pang-Leen ; Samantaray, Chandan ; Chen, Zhi
Author_Institution :
Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
79
Lastpage :
80
Keywords :
Annealing; Deuterium; Dielectric measurements; Hafnium oxide; Leakage current; MOS capacitors; Semiconductor films; Silicon; Thickness measurement; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305127
Filename :
4097544
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453090
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