DocumentCode

3453107

Title

Effect of Poly-Si Gate Depletion on Tuning Range in MOS Varactors

Author

Kulkarni, Jaydeep P. ; Bhat, Navakanta

Author_Institution

ECE Department, Purdue University, West Lafayette, Indiana, USA. Phone: 765-494-9448, Email: jaydeep@purdue.edu

fYear

2006

fDate

26-28 June 2006

Firstpage

81

Lastpage

82

Keywords

CMOS process; CMOS technology; Capacitance; Diodes; Doping; Electrodes; Implants; MOS devices; Q factor; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

conf

DOI

10.1109/DRC.2006.305128

Filename

4097545