DocumentCode
3453124
Title
Enhancement and Depletion-mode GaAs N-MOSFETs with stacked HfO2/Y2O3 gate dielectric
Author
Zhu, F. ; Koveshnikov, S. ; Ok, I. ; Kim, H.S. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S. ; Tsai, W. ; Lee, J.C.
Author_Institution
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758. Phone: 512-471-1627, email: zhufeng@mail.utexas.edu
fYear
2006
fDate
26-28 June 2006
Firstpage
83
Lastpage
84
Keywords
Annealing; Gallium arsenide; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Interface states; MOSFET circuits; Passivation; Scattering; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305129
Filename
4097546
Link To Document