Title :
Comparing High Mobility InGaAs FETs with Si and GOI Devices
Author :
Liao, C.C. ; Kao, H.L. ; Chin, Albert ; Yu, D.S. ; Li, Ming-Fu ; Zhu, C. ; McAlister, S.P.
Author_Institution :
Nano Science Tech. Center, Dept. of Electronics Eng., Nat´´l Chiao-T. Univ., Univ. System of Taiwan, Hsinchu, Taiwan, ROC
Abstract :
We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm2/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-?? Al2O3/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO2/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm2/Vs effective mobility was 2.5X higher.
Keywords :
Atomic layer deposition; FETs; HEMTs; High-K gate dielectrics; Indium compounds; Indium gallium arsenide; Indium phosphide; Leakage current; MOSFET circuits; Substrates;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305130
