Title :
Germanium Passivation for High-k Dielectric III-V MOSFETs and Temperature Dependence of Dielectric Leakage Current
Author :
Kim, Hyoung-Sub ; Ok, I. ; Zhang, M. ; Lee, T. ; Zhu, F. ; Thareja, G. ; Yu, L. ; Koveshnikov, S. ; Tsai, W. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S. ; Lee, Jack C.
Author_Institution :
Microelectronics Research Center, R9950, The University of Texas at Austin, Austin, Texas 78758. Tel: (512)471-1627, Fax: (512)471-5625, email: hskim1997@mail.utexas.edu
Keywords :
Dielectric devices; Gallium arsenide; Germanium; Hafnium oxide; High-K gate dielectrics; III-V semiconductor materials; Leakage current; MOSFETs; Passivation; Temperature dependence;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305131
