Title :
Fully dry-etched InP Double-Hetero Bipolar Transistors with ft > 400 GHz
Author :
Weimann, N.G. ; Houtsma, V. ; Yang, Y. ; Frackoviak, J. ; Tate, A. ; Chen, Y.K.
Author_Institution :
Lucent Technologies Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, USA. weimann@lucent.com, Phone: +1-908-582-2655, Fax: +1-908-582-6322
Keywords :
Bipolar transistors; Clocks; Dry etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Plasma temperature; Thermal resistance; Voltage; Wet etching;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305132
