DocumentCode
3453159
Title
Fully dry-etched InP Double-Hetero Bipolar Transistors with ft > 400 GHz
Author
Weimann, N.G. ; Houtsma, V. ; Yang, Y. ; Frackoviak, J. ; Tate, A. ; Chen, Y.K.
Author_Institution
Lucent Technologies Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, USA. weimann@lucent.com, Phone: +1-908-582-2655, Fax: +1-908-582-6322
fYear
2006
fDate
26-28 June 2006
Firstpage
89
Lastpage
90
Keywords
Bipolar transistors; Clocks; Dry etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Plasma temperature; Thermal resistance; Voltage; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305132
Filename
4097549
Link To Document